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SSM6K24FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6K24FE
High Speed Switching Applications
* * Optimum for high-density mounting in small packages Low on-resistance: Ron = 145m (max) (@VGS = 4.5 V) Ron = 180m (max) (@VGS = 2.5 V) Unit: mm
1.60.05 1.20.05 0.20.05 0.5
1.60.05
1.00.05
0.5
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 12 0.5 1.5 500 150 -55~150 Unit
1 2 3
6 5 4 0.120.05
V V A mW C C
Note:
ES6 Using continuously under heavy loads (e.g. the application of JEDEC high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2N1A operating temperature/current/voltage, etc.) are within the Weight: 3.0 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm )
Marking
6 5 4
Equivalent Circuit (top view)
6 5 4
NF
1 2 3 1 2 3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
0.550.05
1,2,5,6 :Drain 3 :Gate 4 :Source
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SSM6K24FE
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 12 V, VDS = 0 ID = 1 mA, VGS = 0 ID = 1 mA, VGS = -12 V VDS = 30 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 0.25 A ID = 0.50 A, VGS = 4.5 V ID = 0.25 A, VGS = 2.5 V VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 0.25 A, VGS = 0~2.5 V, RG = 4.7 (Note2) (Note2) (Note2) Min 30 18 0.5 1.0 Typ. 2.0 120 140 245 33 41 9 15 Max 1 1 1.1 145 180 Unit A V A V S m pF pF pF ns
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit (b) VIN
OUT IN 0V RG 10 s VDD = 10 V RG = 4.7 < D.U. = 1% VIN: tr, tf < 5 ns Common Source Ta = 25C 10% 2.5 V 90%
2.5 V 0
VDD
(c) VOUT
VDD
10% 90% tr ton tf toff
VDS (ON)
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration when using the device.
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SSM6K24FE
1600 1400 1200 1000 800 600 400 200 0 0 0.2 0.4 0.6 0.8 Drain-Source voltage VDS (V) 1
ID - VDS 1.8 1.6
ID - VGS 10000 1000 Drain current ID (mA) 100 Ta=100C 10 1 0.1 0.01 0 1 2 Gate-Source voltage VGS (V) 3 25C -25C Common Source VDS=3V
Drain current ID (mA)
2.0 3.0 4.0 5.0
VGS=1.4V
Common Source Ta=25C
200 180 Drain-Source on resistance RDS(ON) (m) 160 140 120 100 80 60 40 20 0 0 200
RDS(ON) - ID Common Source Ta=25C
Drain-Source on resistance RDS(ON) (m)
400 350 300 250 200 150 100 50 0
RDS(ON) - VGS Common Source ID=500mA
2.5V
VGS=4.5V
25C
Ta=100C
-25C
400 600 800 1000 1200 1400 1600 Drain current ID (mA)
0
1
2 3 4 5 6 7 8 Gate-Source voltage VGS (V)
9
10
RDS(ON) - Ta
400 350 Drain-Source on resistance RDS(ON) (m) 300 250 1
Vth - Ta Common Source ID=0.1mA VDS=3V
Common Source
Gate threshold voltage Vth(V) 0.8
2.5V,250mA
200 150 100 50 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C)
0.6
0.4
VGS=4.5V,ID=500mA
0.2
0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C)
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SSM6K24FE
10
|Yfs| - ID
1600 Drain reverse current IDR (mA) 1400 1200 1000 800
S
IDR - VDS Common Source VGS=0V Ta=25C
D
Forward transfer admittance |Yfs| (S)
25C -25C
1
Ta=100C
G
IDR
600 400 200 0
Common Source VDS=3V Ta=25C
0 10 100 1000 10000 Drain current ID (mA)
0
-0.2 -0.4 -0.6 -0.8 Drain-Source voltage VDS (V)
-1
1000
C - VDS
Common Source VGS=0V f=1MHz Ta=25C
1000
t - ID Common Source VDD=10V VGS=0 ~2.5V Ta=25C
Capacitance C (pF)
Ciss
100
Switching time t (ns)
100
toff tf
10
ton tr
Coss Crss
10 0.1 1 10 Drain-Source voltage VDS (V) 100 1 10
100 1000 Drain current ID (mA)
10000
1000
PD - Ta
mounted FR4 board (25.4mm*25.4mm*1.6t Cu Pad :645mm2)
Drain power dissipation PD(mW)
800
600 DC 400
200
0 0 20 40 60 80 100 120 Ambient temperature Ta() 140 160
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SSM6K24FE
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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